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BFU710F

Information on: BFU710F

• Low Cost High Gain Fast Turn On/Off 5-5.9GHz WiFi LNA with BFU730F
  Application Note AN11454 November 2013 This document provides circuit simulation, schematic, layout, BOM and typical EVB performance for a 5-5.9 GHz WiFi (WLAN) LNA. The BFU730F is a discrete HBT that is produced using NXP Semiconductors' advanced 110 GHz fT SiGe:C BiCmos process. SiGe:C is a normal silicon germanium process with the addition of Carbon in the base layer of the NPN transistor. The presence of carbon in the base layer suppresses the boron diffusion during wafer processing. This ...